Metal barrier-doped metal contact layer
US8987587B2 · kind B2 · utility
1Cited by
7References
9Claims
0Family size
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Key dates
| Filing date | Sep 13, 2012 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Sep 13, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.