Highly conductive nano-structures incorporated in semiconductor nanocomposites
US8987706B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2013 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Dec 9, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/932
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The presently claimed invention provides a highly conductive composite used for electric charge transport, and a method for fabricating said composite. The composite comprises a plurality of one-dimensional semiconductor nanocomposites and highly conductive nanostructures, and the highly conductive nanostructures are incorporated into each of the one-dimensional semiconductor nanocomposite. The composite is able to provide fast electric charge transport, and reduce the rate of electron-hole recombination, ultimately increasing the power conversion efficiency for use in solar cell; provide fast electrons transport, storage of electrons and large surface area for adsorption and reaction sites of active molecular species taking part in photocatalytic reaction; enhance the sensitivity of a surface for biological and chemical sensing purposes for use in biological and chemical sensors; and lower the impedance and increase the charge storage capacity of a lithium-ion battery.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.