Carbonaceous nanomaterial-based thin-film transistors
US8987710B2 · kind B2 · utility
1Cited by
1References
18Claims
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Key dates
| Filing date | May 21, 2012 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Dec 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed are thin film transistor devices incorporating a thin film semiconductor derived from carbonaceous nanomaterials and a dielectric layer composed of an organic-inorganic hybrid self-assembled multilayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.