Semiconductor device and method of manufacturing semiconductor device
US8987728B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2012 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Oct 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.