Semiconductor device with silicon nitride films having different oxygen densities
US8987747B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 19, 2012 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Oct 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/514
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of an embodiment includes a semiconductor layer formed of a III-V group nitride semiconductor, a first silicon nitride film formed on the semiconductor layer, a gate electrode formed on the first silicon nitride film, a source electrode and a drain electrode formed on the semiconductor layer such that the gate electrode is interposed between the source electrode and the drain electrode, and a second silicon nitride film formed between the source electrode and the gate electrode and between the drain electrode and the gate electrode and having an oxygen atom density lower than that of the first silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.