Light emitting diode and method for fabricating the same

US8987749B2 · kind B2 · utility

Assignee

• IMEC · BE

Inventors

• Barry Rand · Princeton, US
• Celso Cavaco · Leuven, BE

Key dates

• Filing date: Jun 14, 2013
• Grant date: Mar 24, 2015
• Expiry date: Jun 14, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/82

Abstract

The disclosed technology relates to a light-emitting diode (LED) and a method of fabricating the same. In one aspect, the LED includes a GaN p-n junction formed at a junction between a p-type GaN layer and an n-type GaN layer. The LED further includes a first metal electrode layer provided on the p-type GaN layer, where the first metal electrode layer is configured to reflect light emitted by the p-n junction towards a light emitting side of the LED. The LED additionally includes an attachment layer interposed between and configured to electrically connect the p-type GaN layer and the metal electrode layer, wherein the attachment layer comprises a transition metal oxide and is configured to transmit light emitted by the p-n junction and to transmit light reflected by the metal electrode layer.