Highly directional thermal emitter
US8987754B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2013 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Sep 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N19/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A highly directional thermal emitter device comprises a two-dimensional periodic array of heavily doped semiconductor structures on a surface of a substrate. The array provides a highly directional thermal emission at a peak wavelength between 3 and 15 microns when the array is heated. For example, highly doped silicon (HDSi) with a plasma frequency in the mid-wave infrared was used to fabricate nearly perfect absorbing two-dimensional gratings structures that function as highly directional thermal radiators. The absorption and emission characteristics of the HDSi devices possessed a high degree of angular dependence for infrared absorption in the 10-12 micron range, while maintaining high reflectivity of solar radiation (˜64%) at large incidence angles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.