Light-emitting device
US8987761B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2012 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Jun 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
A structure of a light-emitting device includes the following components: a substrate; an epitaxial structure on the substrate, the epitaxial structure including at least a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer; a first electrode on the first conductivity type semiconductor layer; a transparent conductive layer between the first electrode and the first conductivity type semiconductor layer; and a three-dimensional distributed Bragg reflector (DBR) layer between the transparent conductive layer and the first conductivity type semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.