Vertical type semiconductor devices including oxidation target layers
US8987805B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2013 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Aug 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
A vertical type semiconductor device can include a vertical pillar structure that includes a channel pattern with an outer wall. Horizontal insulating structures can be vertically spaced apart from one another along the vertical pillar structure to define first vertical gaps therebetween at first locations away from the outer wall and to define second vertical gaps therebetween at the outer wall, where the second vertical gaps are wider than the first vertical gaps. Horizontal wordline structures can be conformally located in the first and second vertical gaps between the vertically spaced apart horizontal insulating structures, so that the horizontal wordline structures can be vertically thinner across the first vertical gaps than across the second vertical gaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.