Thin film transistor with accurately aligned electrode patterns and electronic device(s) that include same

US8987808B2 · kind B2 · utility

Assignees

• Cambridge Enterprise Limited · GB
• PLASTIC LOGIC LIMITED · GB

Inventors

• Paul Cain · Cambridge, GB
• Yong-Young Noh · Daejeon, KR
• Henning Sirringhaus · Cambridge, GB

Key dates

• Filing date: Mar 28, 2007
• Grant date: Mar 24, 2015
• Expiry date: Jan 8, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/464

Abstract

An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating a trench in a region essentially over said channel, the electronic device further comprising a further electrode, wherein the further electrode is located partially in the trench and partially beyond the trench such that portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer.