Patent · US Active

Ground shield structure and semiconductor device

US8987839B2 · kind B2 · utility

3Cited by
0References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 12, 2013
Grant dateMar 24, 2015
Priority date
Expiry dateDec 5, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19104
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Various embodiments provide ground shield structures, semiconductor devices, and methods for forming the same. An exemplary structure can include a substrate and a dielectric layer disposed on the substrate. The structure can further include multiple conductive rings disposed in the substrate, in the dielectric layer, and/or on the dielectric layer. Each conductive ring of the multiple conductive rings can have openings of about three or more, and the openings of the each conductive ring can divide the multiple conductive rings into a plurality of sub-conductive rings arranged spaced apart. The structure can further a ground ring electrically connected to each of the plurality of sub-conductive rings.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.