Semiconductor device and body bias method thereof
US8988135B2 · kind B2 · utility
4Cited by
11References
27Claims
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Key dates
| Filing date | Nov 27, 2013 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Nov 27, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/205
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
Exemplary embodiments disclose a semiconductor device which includes a function block including a plurality of transistors; a temperature detector configured to detect a driving temperature of the function block in real time; and an adaptive body bias generator configured to provide a body bias voltage to adaptively adjust leakage currents of the transistors according to the detected driving temperature, wherein the adaptive body bias generator is further configured to generate a body bias voltage corresponding to a predetermined minimum leakage current according to the driving temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.