Radio frequency devices with enhanced ground structure
US8988169B2 · kind B2 · utility
3Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 2007 |
| Grant date | Mar 24, 2015 |
| Priority date | — |
| Expiry date | Sep 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/203
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
Tunable radio frequency (RF) devices, such as phase shifters and filters, are formed by depositing thin film layers on a substrate and patterning the thin film layers by various lithography techniques. A thin film metal layer is patterned to form a plurality of capacitors and inductors, leaving at least two grounding regions that lie closely adjacent the capacitors and inductors. As patterned portions of the grounding regions are electrically isolated from each other. Performance of the devices are improved by electrically bridging the differential potential grounding regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.