Patent · US Active

Nonvolatile magneto-electric random access memory circuit with burst writing and back-to-back reads

US8988923B2 · kind B2 · utility

6Cited by

0References

20Claims

0Family size

Assignee

The Regents of the University of California · US

Inventors

Pedram Khalili Amiri · Los Angeles, US
Richard Dorrance · Hillsboro, US
Dejan Markovic · Los Angeles, US
Kang L. Wang · Santa Monica, US

Key dates

Filing date	Aug 30, 2013
Grant date	Mar 24, 2015
Priority date	—
Expiry date	Aug 30, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/1693
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Voltage controlled magneto-electric tunnel junctions (MEJ) and associated memory devices are described which provide efficient high speed switching of non-volatile magnetic random access memory (MeRAM) devices at high cell densities with multiple word access mechanisms, including a burst mode write of multiple words, and a back-to-back read of two words in consecutive clock cycles. In at least one preferred embodiment, these accesses are performed in a manner that prevents any possibility of a read disturbance arising.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.