Patent · US Active

Low-temperature synthesis of silica

US8993063B2 · kind B2 · utility

0Cited by

12References

19Claims

0Family size

Assignee

President and Fellows of Harvard College · US

Inventors

Joanna Aizenberg · New Providence, US
Benjamin Hatton · Rancho Santa Margarita, US

Key dates

Filing date	Jun 8, 2011
Grant date	Mar 31, 2015
Priority date	—
Expiry date	Nov 13, 2031

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C16/545
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

An ambient pressure Atomic Layer Deposition (ALD) technique to grow uniform silica layers onto organic substrates at low temperatures, including room temperature, is described. For example, tetramethoxysilane vapor is used alternately with ammonia vapor as a catalyst in an ambient environment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.