Double exposure technique for high resolution disk imaging
US8993217B1 · kind B1 · utility
1Cited by
605References
20Claims
0Family size
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Key dates
| Filing date | May 30, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | May 30, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2022
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Innovative techniques are disclosed for fabricating microelectronic devices using an alternating phase shift mask. Some embodiments of the invention encompass a double exposure technique that utilize high resolution line patterning such that two opaque lines intersect at an angle. After development, substantially circular images may be formed. In certain embodiments, high resolution disk imaging as small as 60 nm is possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.