Thin-film transistor and method for manufacturing thin-film transistor
US8993383B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | May 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a thin-film transistor, includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating layer above the gate electrode; forming a semiconductor film above the gate insulating layer; forming, above the semiconductor film, a protective layer comprising an organic material; forming a source electrode and a drain electrode above the protective layer; forming a semiconductor layer patterned, by performing dry etching on the semiconductor film; removing at least a portion of a region of an altered layer, the region contacting the semiconductor layer, the altered layer being a surface layer of the protective layer that is altered by the dry etching; and forming a passivation layer having a major component identical to a major component of the protective layer so as to contact the semiconductor layer in a region in which the altered layer has been removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.