Method of manufacturing a semiconductor device with processes carried out without atmospheric exposure
US8993440B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Jul 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device according to an embodiment, includes forming a wiring in a surface of a first insulating film on a semiconductor substrate, exposing the first insulating film in whose surface the wiring is formed to a plasma containing a rare gas so as to form a densified layer on the surface of the first insulating film, removing an oxide film formed on the wiring, after the densified layer is formed and forming a second insulating film on the wiring from which the oxide film is removed and on the densified layer, wherein the processes from the removal of the oxide film to the formation of the second insulating film are carried out without being atmospherically-exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.