Semiconductor devices including a nanowire and methods of manufacturing the same
US8993991B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2011 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Mar 9, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.