Patent · US Active

Hybrid silicon optoelectronic device and method of formation

US8994004B2 · kind B2 · utility

9Cited by
8References
19Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 27, 2012
Grant dateMar 31, 2015
Priority date—
Expiry dateJan 27, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.