Oxide semiconductor film and semiconductor device
US8994021B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2014 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Mar 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
Abstract
An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.