Semiconductor device with heat removal structure and related production method
US8994036B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 17, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | May 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to the invention, a semiconductor device composite structure is provided which comprises an initial substrate with discrete, integrated devices and a heat removal structure. The heat removal structure comprises: a bond layer which is attached to the initial substrate or the devices, a heat removal structure which is attached on the bond layer and which consists of a material with a specific thermal conductivity which is at least double the level of the average specific heat conductivity of the initial substrate or the devices, and one or more metallic thermal bridges which thermally connect the devices with the heat removal structure via the bond layer. The thermal bridges are designed as vertical through connections (vias) through the bond and heat removal structure. The invention furthermore relates to an associated production method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.