Method of manufacturing semiconductor device
US8994060B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2011 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Jun 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.