High-voltage vertical power component
US8994065B2 · kind B2 · utility
4Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | May 23, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Oct 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/104
Abstract
A vertical power component including: a silicon substrate of a first conductivity type; on the side of a lower surface of the substrate supporting a single electrode, a lower layer of the second conductivity type; and on the side of an upper surface of the substrate supporting a conduction electrode and a gate electrode, an upper region of the second conductivity type, wherein the component periphery includes, on the lower surface side, a porous silicon insulating ring penetrating into the substrate down to a depth greater than that of the lower layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.