Non-volatile memory device having a vertical structure and method of fabricating the same
US8994091B2 · kind B2 · utility
12Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2012 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Aug 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/694
Abstract
A non-volatile memory device having a vertical structure includes a semiconductor layer, a sidewall insulation layer extending in a vertical direction on the semiconductor layer, and having one or more protrusion regions, first control gate electrodes arranged in the vertical direction on the semiconductor layer, and respectively contacting one of portions of the sidewall insulation layer where the one or more protrusion regions are not formed and second control gate electrodes arranged in the vertical direction on the semiconductor layer, and respectively contacting one of the one or more protrusion regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.