Nonvolatile semiconductor memory device and method for manufacturing same
US8994094B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 18, 2011 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Jan 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes first and second stacked body, first and second semiconductor pillars, a connecting portion, a first memory film, and a dividing portion. The stacked bodies include a plurality of electrode films stacked along a first axis and as interelectrode insulating film provided between the electrode films. The first and second semiconductor pillars penetrate through the first and second stacked bodies along the first axis, respectively. The connecting portion electrically connects the first and second semiconductor pillars. The first memory film is provided between the electrode film and the semiconductor pillar. The dividing portion electrically divides the first and second electrode films from each other between the first semiconductor pillar and the second semiconductor pillar, is in contact with the connecting portion, and includes a stacked film including a material used for the first memory film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.