Fin field effect transistor (finFET)
US8994112B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2009 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Oct 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Fin FET whose fin (12) has an upper portion (30) doped with a first conductivity type and a lower portion (32) doped with a second conductivity type, wherein the junction (34) between the upper portion (30) and the lower portion (32) acts as a diode; and the FinFET further comprises: at least one layer (26, 28) of high-k dielectric material (for example Si3N4) adjacent at least one side of the fin (12) for redistributing a potential drop more evenly over the diode, compared to if the at least one layer of high-k dielectric material were not present, when the upper portion (30) is connected to a first potential and the lower portion (32) is connected to a second potential thereby providing the potential drop across the junction (34). Examples of the k value for the high-k dielectric material are k≧5, k≧7.5, and k≧20.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.