Semiconductor device and method of manufacturing a semiconductor device

US8994113B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Marc Strasser · Munich, DE
• Karl-Heinz Gebhardt · Dresden, DE
• Andreas Meiser · Unterhaching, DE
• Till Schloesser · Dresden, DE

Key dates

• Filing date: Apr 17, 2013
• Grant date: Mar 31, 2015
• Expiry date: Apr 17, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/83

Abstract

A semiconductor device formed in a semiconductor substrate includes an isolation trench in the semiconductor substrate to laterally insulate adjacent components of the semiconductor device. A lateral isolation layer is disposed in the isolation trench. The semiconductor device further includes a source region and a drain region, and a body region and a drift region disposed between the source region and the drain region. The semiconductor device additionally includes a gate electrode adjacent to at least a portion of the body region and a field plate adjacent to at least a portion of the drift region. A field dielectric layer is disposed between the drift region and the field plate. A top surface of the field dielectric layer is disposed at a greater height measured from a first main surface of the semiconductor substrate than a top surface of the lateral isolation layer.