Photoelectric conversion element, solid-sate imaging element, imaging apparatus, and method for manufacturing photoelectric conversion element
US8994132B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2011 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | May 14, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A photoelectric conversion element includes an insulating film, a first electrode, a light receiving layer, and a second electrode. The first electrode is formed on the insulating film and is made of titanium oxynitride. The light receiving layer is formed on the first electrode and includes an organic material. A composition of the first electrode just before forming the light receiving layer meets (1) a requirement that an amount of oxygen contained in the whole of the first electrode is 75 atm % or more of an amount of titanium, or (2) a requirement that in a range of from the substrate side of the first electrode to 10 nm or a range of from the substrate side of the first electrode to ⅔ of the thickness of the first electrode, an amount of oxygen is 40 atm % or more of an amount of titanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.