Semiconductor device and circuit for controlling potential of gate of insulated gate type switching device
US8994437B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 14, 2012 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Feb 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M1/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device outputs a signal to control a gate potential a switching device. The semiconductor device includes a first signal output terminal, and is capable of receiving or internally creating a reference signal, which varies between a first potential and a second potential. The semiconductor device can switch between first and second operations. The first operation outputs to the first signal output terminal a signal that is at a third potential when the reference signal is at the first potential, and that is at a fourth potential higher than the third potential when the reference signal is at the second potential. The second operation outputs to the first signal output terminal a signal that is at the fourth potential when the reference signal is at the first potential, and that is at the third potential when the reference signal is at the second potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.