System and methods for dynamic erase and program control for flash memory device memories
US8995197B1 · kind B1 · utility
41Cited by
122References
43Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 27, 2012 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | May 15, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5644
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A computer readable medium, a system and a method for flash memory device parameter optimization, the method may include: receiving or generating an estimate of a wear level of at least one group of flash memory cells of the flash memory device, and finding erase parameters and programming parameters to be applied on one or more groups of flash memory cells of the flash memory device in response to estimate of the wear level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.