Semiconductor stack and vertical cavity surface emitting laser
US8995489B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 8, 2013 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Apr 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34373
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor stack includes a semiconductor DBR (Distributed Bragg Reflector) formed on a substrate, and a resonator formed on the semiconductor DBR laminating wide-band semiconductor layers and active layers alternately. Each of the active layers includes MQWs (Multiple Quantum Wells) and two spacer layers formed one on each surface of the MQWs. The MQWs are formed by laminating barrier layers and quantum well layers alternately. There are n layers of the wide-band semiconductor layer formed, and a band gap Egm of an m-th wide-band semiconductor layer counting from the substrate and a band gap Egm-1 of an m−1-th wide-band semiconductor layer counting from the substrate satisfy Egm-1<Egm where n and m are integers greater than or equal to 2, and 1<m≦n.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.