Semiconductor laser element
US8995492B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 4, 2012 |
| Grant date | Mar 31, 2015 |
| Priority date | — |
| Expiry date | Jul 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To provide a ridge-type semiconductor laser element capable of preventing inclination at the time of junction-down bonding and having high heat dissipation, in a semiconductor laser element including a substrate, a semiconductor portion disposed on the substrate and having a ridge on a surface at an opposite side from the substrate, an electrode disposed on a ridge, an insulating layer disposed on the semiconductor portion at the both sides of the ridge and a pad electrode disposed on the electrode, in which, the pad electrode side is a mounting surface side, the pad electrode is disposed extending on the insulating layer, and a spacer is disposed between the semiconductor portion and the pad electrode at parts spaced apart from the ridge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.