In-situ boron doped PDC element
US8997900B2 · kind B2 · utility
8Cited by
102References
21Claims
0Family size
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Key dates
| Filing date | Dec 15, 2010 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Oct 31, 2031 |
Classification
- Technology area (CPC E)Fixed Constructions
- CPC primaryE21B10/573
- WIPO fieldCivil engineering
- WIPO sectorOther fields
Abstract
A polycrystalline diamond compact formed in an in-situ boron-doped process. The in-situ boron-doped process includes consolidating a mixture of diamond crystals and boron-containing alloy via liquid diffusion of boron into diamond crystals at a pressure greater than 5 Gpa and at a temperature greater than the melting temperature of the boron-containing alloy, typically less than about 1450° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.