Small-scale fabrication systems and methods
US8999105B2 · kind B2 · utility
2Cited by
5References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2013 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Jan 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An etch mask is formed on a substrate. The substrate is positioned in an enclosure configured to shield an interior of the enclosure from electromagnetic fields exterior to the enclosure; and the substrate is etched in the enclosure, including removing a portion of the substrate to form a structure having at least a portion that is isolated and/or suspended over the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.