Oriented amorphous carbon film and process for forming the same
US8999604B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2010 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Nov 13, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The oriented amorphous carbon film contains C as a main component, 3 to 20 at. % of N, and more than 0 at. % and not more than 20 at. % of H, and when the total amount of the C is taken as 100 at. %, the amount of C having an sp2 hybrid orbital (Csp2) being not less than 70 at. % and less than 100 at. %, and (002) planes of graphite being oriented along a thickness direction. This film has a novel structure and exhibits a high electric conductivity. This film can be formed by DC plasma CVD method in which an electric discharge is generated by applying a voltage of not less than 1500 V to reaction gas including at least one kind of compound gas selected from gas of a carbocyclic compound containing Csp2 and gas of an N-containing heterocyclic compound containing Csp2, and nitrogen and/or silicon, and nitrogen gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.