Photosensitive sacrificial polymer with low residue
US8999629B2 · kind B2 · utility
2Cited by
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19Claims
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Assignee
Inventors
Key dates
| Filing date | Apr 11, 2014 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Apr 11, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0108
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Embodiments according to the present invention relate generally to PAG bilayer and PAG-doped unilayer structures using sacrificial polymer layers that incorporate a photoacid generator having a concentration gradient therein. Said PAG concentration being higher in a upper portion of such structures than in a lower portion thereof. Embodiments according to the present invention also relate to a method of using such bilayers and unilayers to form microelectronic structures having a three-dimensional space, and methods of decomposition of the sacrificial polymer within the aforementioned layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.