Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof
US8999778B2 · kind B2 · utility
13Cited by
48References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2011 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Dec 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/068
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Some embodiments include a method of providing a semiconductor device. The method can include: (a) providing a flexible substrate; (b) depositing at least one layer of material over the flexible substrate, wherein the deposition of the at least one layer of material over the flexible substrate occurs at a temperature of at least 180° C.; and (c) providing a diffusion barrier between a metal layer and an a-Si layer. Other embodiments are disclosed in this application.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.