Method for fabricating resistive random access memory
US8999809B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2014 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Nov 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a resistive random access memory (RRAM) device is disclosed. A plurality of word lines extending along a first direction are formed on a substrate with a recess between the word lines. A spacer-type resistance layer and a top electrode layer are formed on a sidewall of each of the word lines. A photoresist stripe pattern extending along a second direction is then formed on the substrate. The first direction is perpendicular to the second direction. An etching process is performed to remove the top electrode layer and the spacer-type resistance layer not covered by the photoresist stripe pattern to form a plurality of top electrodes. A diode is formed on each of the top electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.