Fabricating method of carbon nanotube-based field effect transistor and carbon nanotube-based field effect transistor fabricated thereby
US8999820B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2013 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Oct 8, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/742
Abstract
There are provided a fabricating method of a carbon nanotube-based field effect transistor having an improved binding force with a substrate and a carbon nanotube-based field effect transistor fabricated by the fabricating method. The method includes forming an oxide film on a substrate, forming a photoresist pattern on the oxide film, forming a metal film on the entire surface of the oxide film having the photoresist pattern, removing the photoresist by lifting off, adsorbing carbon nanotubes on the substrate from which the photoresist is removed, performing an annealing process to the substrate to which the carbon nanotubes are adsorbed, and removing the metal film. Since an adhesive strength between a substrate and carbon nanotubes increases, stability and reliability of a field effect transistor can be improved. If the field effect transistor is applied to a liquid sensor or the like, a lifespan of the sensor can be extended and reliability of a measurement result obtained by the sensor can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.