Patent · US Active

Methods for formation of substrate elements

US8999851B2 · kind B2 · utility

2Cited by
27References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 9, 2008
Grant dateApr 7, 2015
Priority date
Expiry dateNov 10, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/121
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.