Sense node capacitive structure for time of flight sensor
US9000349B1 · kind B1 · utility
15Cited by
6References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 16, 2010 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Nov 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/933
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An increased sense node capacitance, mainly for 3D time-of-flight (TOF) applications, includes a storage structure that combines the advantages of gate and diffusion capacitance in order to improve the overall capacitance. The storage structure provides higher capacitance per unit area and accordingly a better fill-factor/sensitivity of the pixel; improved noise behaviour because of the use of gate capacitances, better protection against interacting signals and thus better signal quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.