Patent · US Active

Nanoparticle synthesis

US9000416B2 · kind B2 · utility

0Cited by
2References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 17, 2013
Grant dateApr 7, 2015
Priority date
Expiry dateFeb 17, 2033

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/893
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A noble metal nanoparticle can be grown on a semiconductor substrate by contacting a predetermined region of the substrate with a solution including noble metal ions. The predetermined region of the semiconductor substrate can be exposed by applying a polymeric layer over the substrate selectively removing a portion of the polymeric layer. The nanoparticles can be prepared in a predetermined pattern. The nanoparticle can be formed with a barrier separating it from another nanoparticle on the substrate; for example, nanoparticle can be located in a pit etched in the substrate. The size and location of the nanoparticle can be stable at elevated temperatures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.