Gate-all-around carbon nanotube transistor with selectively doped spacers
US9000499B2 · kind B2 · utility
13Cited by
11References
20Claims
0Family size
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Key dates
| Filing date | Aug 20, 2013 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Aug 20, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of fabricating a semiconducting device is disclosed. A carbon nanotube is formed on a substrate. A portion of the substrate is removed to form a recess below a section of the carbon nanotube. A doped material is applied in the recess to fabricate the semiconducting device. The recess may be between one or more contacts formed on the substrate separated by a gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.