High performance surface illuminating GeSi photodiodes

US9000551B2 · kind B2 · utility

Assignee

• SiFotonics Technologies Co., Ltd. · KY

Inventors

• Mengyuan Huang · Cupertino, US
• Tuo Shi · 安丰镇, CN
• Pengfei Cai · Beijing, CN
• Dong Pan · Taipei, TW

Key dates

• Filing date: Feb 28, 2014
• Grant date: Apr 7, 2015
• Expiry date: Feb 28, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/413

Abstract

A GeSi avalanche photodiode (APD includes an anti-reflection structure, a Ge absorption region, and a resonance cavity enhanced (RCE) reflector. The anti-reflection structure includes one or more dielectric layers and a top contact layer which is heavily doped with dopants of a first polarity. The RCE reflector includes: an intrinsic or lightly doped Si multiplication layer, a Si contact layer which is heavily doped with dopants of a second polarity opposite the first polarity, a Si cavity length compensation layer, a buried oxide (BOX) layer, and a Si substrate.