Patent · US Active

Patterned ground shield structures and semiconductor devices

US9000561B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

Xining Wang · Shanghai, CN
Jenhao Cheng · Shanghai, CN
Ling Liu · Shanghai, CN

Key dates

Filing date	Nov 13, 2013
Grant date	Apr 7, 2015
Priority date	—
Expiry date	Nov 13, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/19104
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A patterned ground shield structure is provided. The patterned ground shield structure includes a substrate having a dielectric layer. The patterned ground shield structure also includes a plurality of conductive rings having a plurality of sub conductive rings in the dielectric layer. Further, the patterned ground shield structure includes an interconnection line connecting with all of the sub conductive rings in the dielectric layer. Further, the patterned ground shield structure also includes a ground ring connecting with the interconnection line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.