Power semiconductor module
US9000601B2 · kind B2 · utility
8Cited by
0References
4Claims
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Assignee
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Key dates
| Filing date | Jun 26, 2012 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Oct 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The respective main electrodes of the semiconductor switching elements such as IGBTs, which are respectively mounted on the plurality of insulating boards, are electrically connected to each other via the conductor member. This configuration makes it possible to suppress the occurrence of the resonant voltage due to the junction capacity and the parasitic inductance of each semiconductor switching element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.