Varactor shunt switches with parallel capacitor architecture
US9000866B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 26, 2012 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Oct 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P3/003
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A parallel capacitor varactor shunt switch device may include a shunt layer, a coplanar waveguide (CPW) layer, and a tunable thin film dielectric layer that is interposed between the shunt layer and the CPW layer. The tunable thin film dielectric layer electrically isolates the shunt layer from the CPW layer. The shunt layer includes a plurality of parallel shunt lines. The CPW layer includes a CPW signal transmission line with two CPW ground lines parallel to the CPW signal transmission line. A plurality of varactor areas equal in number to the plurality of parallel shunt lines are defined in the CPW signal transmission line, each varactor area corresponding to an overlap of the CPW signal transmission line with a respective shunt line and each respective parallel shunt line and its corresponding varactor area defines a capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.