Pixel structure with multiple transfer gates
US9001245B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2010 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Dec 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1865
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel structure comprises a photo-sensitive element for generating charge in response to incident light. A first transfer gate is connected between the photo-sensitive element and a first charge conversion element. A second transfer gate is connected between the photo-sensitive element and a second charge conversion element. An output stage outputs a first value related to charge at the first charge conversion element and outputs a second value related to charge at the second charge conversion element. A controller controls operation of the pixel structures and causes a pixel structure. The controller causes the pixel structure to: acquire charges on the photo-sensitive element during an exposure period; transfer a first portion of the charges acquired during the exposure period from the photo-sensitive element to the first charge conversion element via the first transfer gate; and transfer a second portion of the charges acquired during the exposure period from the photo-sensitive element to the second charge conversion element via the second transfer gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.