Method for nondestructively reading resistive memory elements

US9001558B2 · kind B2 · utility

Assignees

• Forschungszentrum Jülich GmbH · DE
• Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen · DE

Inventors

• Roland ROSEZIN · Bernau, DE
• Florian Lentz · Pulheim, DE
• Rainer Bruchhaus · Yokohama, JP
• Eike Linn · Würselen, DE
• Ilia Valov · Aachen, DE
• Rainer Waser · Aachen, DE
• Stefan Tappertzhofen · Aachen, DE
• Lutz Nielen · Aachen, DE

Key dates

• Filing date: Feb 3, 2012
• Grant date: Apr 7, 2015
• Expiry date: Feb 3, 2032

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C2213/76
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A method for reading out a memory element comprises a series connection. of at least two memory cells A and B each have a stable state A0 or B0 having higher resistance and a stable state A1 or B1 having lower electrical resistance. An electrical variable of the series circuit is measured and an electrical variable is selected for this measurement, to which the memory cell A in state A0 makes a different contribution than the memory cell B in state B0 and/or to which the memory cell A instate A1 makes a different contribution than the memory cell B in state B1. The two state combinations A1 and B0 or A0 and B1 then result in differing values for the electrical variable that is measured by way of the series circuit. These state combinations can thus be distinguished from each other without having to change the logic state of the memory element during reading.